 Resistance from 1 mΩ to 111 MΩ
 Available in doublepower version: HARSX2
 Wide choice: single through 11 decade units
 High accuracy  0.01% (100 ppm)
 HARSX: ±(0.01% + 2 mΩ)
 HARSB: ±(0.1% + 4 mΩ)
 Very low zeroresistance: <1 mΩ per decade for HARSX
 Highperformance solid silveralloy contacts
 Low temperature coefficient: 5 ppm/°C
 Noninductive or lowinductance resistors
 Rack mounting available
The HARS Series is the best choice when you need a laboratory grade, tight tolerance, high performance resistance decade that is also cost effective.
The HighAccuracy Resistance Substituter (HARS) resistance decade is a family of instruments providing a very broad choice of high performance resistance sources. The HARS series resistance decade may be used for exacting precision measurement applications requiring high accuracy to 0.01% , good stability typically less than 20 ppm/year, excellent AC frequency response and low zeroresistance.
Any number of decades from one to eleven is available with a resolution as low as 1 mΩ and a maximum available resistance of over 111 MΩ.
The HARS Series employs verylowresistance switches < 1 mΩ with silver plated contacts. A special design keeps zero resistance to less than 1 mΩ per decade for the HARSX. Self cleaning keeps the silver contacts from becoming tarnished when unused, or when only low currents are passed through them. This is most often the case when only minute test currents are drawn by digital multimeters or other test instruments. Contact resistance is stable and remains low and repeatable.
The HARS resistance decades have highquality goldplated telluriumcopper binding posts that serve to minimize the thermal emf effects which would artificially reflect a change in dc resistance measurements. All other conductors within the resistance decade , as well as the solder employed, contain no metals or junctions that could contribute to thermal emf problems.
The HARSX2 is a higher power version of the HARSX precision resistance decade with excellent characteristics of stability, temperature coefficient, power coefficient and rated power up to 1.2 watts.
HARS Resistance Decade Applications
 Can be used as components of dc and ac bridges
 Excellent choice as a resistance calibration or transfer standard
 As a precision RTD simulator.
 The HARS Series decade may be rackmounted to serve as components in measurement and control systems
HARSX Series Resistance Decade Basic Specifications
(Full specifications can be found on datasheet)Accuracy: ≤1 MΩ steps: ±(0.01% + 2 mΩ) 10 MΩ steps: ±0.03% after subtraction of zero resistance, at 23°C; traceable to SIZero Resistance: <1 mΩ per decade at dc for ≤1 MΩ decades: 10 MΩ decade: ≈3 mΩ at dc
Maximum Voltage to Case: 2000 V peak Switches:
Continuous rotation 11 positions marked "0""10" Multiple solid silveralloy contacts
HARSB Series Resistance Decade Basic Specifications
Accuracy: (0.1% + 4 mΩ)
Zero Resistance: <5 mΩ per decade at dc
Maximum Voltage to Case: 1000 V peak Switches:
Continuous rotation 10 positions marked "0""9" Multiple solid silveralloy contacts
Resistors: Combination of wirewound, metal film and resistance wire.
Resistance per step

Total decade resistance

Stability (±ppm/yr)

Longterm stability (±ppm/3 yrs)

Temperature coefficient (±ppm/°C)

Resistor type

HARSX

HARSX2


Max current

Max voltage (per step)

Max power (per step)

Max current

Max voltage (per step)

Max power (per step)


1 mΩ

10 mΩ

50

75

50

Resistance wire

8 A

5 mV

0.04 W

9:A

9 mV

0.08 W

10 mΩ

100 mΩ

50

75

20

4 A

40 mV

0.16 W

6.3 A

63 mV

0.4 W


100 mΩ

1 Ω

50

75

20

1.6 A

0.16 V

0.25 W

2.2 A

0.3 V

0.5 W


1 Ω

10 Ω

20

25

20

Wirewound, noninductive

0.8 A

0.8 V

0.6 W

1.1 A

1.1 V

1.2 W

10 Ω

100 Ω

20

25

15

0.25 A

2.5 V

0.6 W

0.35 A

3.5 V

1.2 W


100 Ω

1 kΩ

20

25

5

80 mA

8 V

0.6 W

110 mA

11 V

1.2 W


1 kΩ

10 kΩ

20

25

5

23 mA

23 V

0.5 W

35 mA

35 V

1.2 W


10 kΩ

100 kΩ

20

25

5

7 mA

70 V

0.5 W

11 mA

110 V

1.2 W


100 kΩ

1 MΩ

20

25

5

2.3 mA*

230 V*

0.5 W*

3 mA*

500 V*

1 W*


1 MΩ

10 MΩ

20

25

5

0.7 mA*

700 V*

0.5 W*

1 mA*

1000 V*

1 W*


10 MΩ

100 MΩ

50

100

10

Metal oxide film

0.1 mA*

1000 V*

0.1 W*

0.1 mA*

1000 V*

0.1 W*

*Subject to maximum of 2000 V to case. 